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Lem: HAS 100-S, Zhongxu: HDC-100BN

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  Lem: HAS 100-S
(23December2014/version 12)
From website, Date: 2020-3-14
Zhongxu:HDC-100BN
File date: 2010-6-30
Primary nominal rms current Primary nominal rms current:  IPN
100 A
Primary nominal rms current: Ipn
100 A
Primary current measuring range Primary current measuring range: IPM
0..±300 A
Primary current measuring range: IP
0~±300 A DC
Load resistance Load resistance2)
Rl
>1 kΩ
Load resistance
Rl
10 kΩ
Output voltage(Analog) Output voltage(Analog) @ ±Ipn, RL=10kΩ, Ta=25℃
Uout
 ±4 V  ±40 mV
Secondary nominal rms voltage
Vsn
4 V
Supply voltage Supply voltage (±5 %): UC
±15 V
Supply voltage: Vc
±15 V ±5%
Current consumption Current consumption: IC
±15 mA
Current consumption: Ic
20 mA
Accuracy Accuracy @ IPN, TA=25℃(excluding offset)
X
<±1 %
Overall accuracy @ Ta=25℃
XL
±1.0 % 
Linearity error Linearity error3)(0-±Ipn)
EL
<±1 % of Ipn
Linearity
εL
±0.5% @ Ta=25℃
Electrical offset voltage Electrical offset voltage TA=25℃
Vo
E
<20 mV
Offset voltage @ Ta=25℃
 Voe
± 40 mV
Hysteresis offset voltage Hysteresis offset voltage @ IP=0, after an excursion of 1 x IPN
Voh
<  ±20 mV
Magnetic offset voltage
Vom
±10.0   mV
Temperature coefficient of Voe Temperature coefficient of Voe
TCVoe
<  ±1 mV/K
Thermal drift of Vo @ Ip=0
VoT
<0.5 mV/°C
Temperature coefficient of Vout Temperature coefficient of Vout(% of reading)
TCVout
<  ±0.1 %/K
Thermal drift of Vc @ Ip=Ipn
VoT
<1.2 mV/°C
Step response time Step response time to 90% of IPN
Tr
<3 µs
Response time @ 90% of Ipn
Tr
<4 µs 
di/dt accurately followed di/dt accurately followed
di/dt
>50 A/μs
di/dt accurately followed
di/dt
>100 A/μs
Frequency bandwidth Frequency bandwidth(- 3 dB) 4)
BW
DC..50 kHz
Frequency bandwidth(- 3 dB)
f
DC..50 kHz
Rms voltage for AC insulation   Rms voltage for AC insulation
Vd
3.0 KV  50 or 60Hz/1 minute
Insulation resistance Insulation resistance @ 500 V DC
RIS
>1000 MΩ
Insulation resistance
RIS
500 MΩ Min at 500 V DC
Ambient operating temperature Ambient operating temperature: TA
- 10.. + 80 °C
-10°C to +80°C
Ambient storage temperature Ambient storage temperature: TS
- 25 .. + 80 °C
-25°C to +85°C
Output internal resistance Output internal resistance approx
Rout
100 Ω
 
Mass Mass approx
60 g
 
Standards Standards
EN 50178:1997, UL 508:2010
 
Note Note:1) Operating at ±12 V ≤ Uc ≤±15 V will reduce the measuring range
2) If the customer uses 1 kΩ of the load resistor, the primary current has to be limited as the nominal; To measure the full defined measuring range, the load resistor should be at minimum 10kΩ
3) Linearity data exclude the electrical offset.
4) Please refer to defating curves in the technical file to avoid excessive core heating at high frequency.
 
Additional Parameters :1 Isolation characteristics
Ud: Rms voltage for AC insulation test, 50 Hz, 1 min > 3.6 kV
ÛW: Impulse withstand voltage 1.2/50 μs ≥ 6.6 kV

dCp: Creepage distance Min 7.08 mm
dCI: Clearance Min 6.23 mm
CTI: Comparative Tracking Index (group IIIa)  Min 275
 
Additional Parameters :2 Applications examples
According to EN 50178 and IEC 61010-1 standards
and following conditions:
● Over voltage category OV 3
● Pollution degree PD2
● Non-uniformfield
dCp, dCI, ÛW
Basic insulation
Reinforced insulation
EN 50178
Rated insulation voltage
600 V
300 V
IEC 61010-1
Nominal voltage
600 V
150 V
 
2020年4月23日 10:55
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